2018年12月7日，深圳六碳科技和復(fù)旦大學(xué)包文中教授團(tuán)隊(duì)合作在 AFM 上發(fā)表論文：Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application
深圳六碳科技作為作者單位，負(fù)責(zé)二維材料的制備
Abstract
Semiconductive transition metal dichalcogenides (TMDs) have been considered as next generation semiconductors, but to date most device investigations are still based on microscale exfoliation with a low yield. Wafer scale growth of TMDs has been reported but effective doping approaches remain challenging due to their atomically thick nature. This work reports the synthesis of wafer‐scale continuous few‐layer PtSe2 films with effective doping in a controllable manner. Chemical component analyses confirm that both n‐doping and p‐doping can be effectively modulated through a controlled selenization process. The electrical properties of PtSe2 films have been systematically studied by fabricating top‐gated field effect transistors (FETs). The device current on/off ratio is optimized in two‐layer PtSe2 FETs, and four‐terminal configuration displays a reasonably high effective field effect mobility (14 and 15 cm2 V?1 s?1 for p‐type and n‐type FETs, respectively) with a nearly symmetric p‐type and n‐type performance. Temperature dependent measurement reveals that the variable range hopping is dominant at low temperatures. To further establish feasible application based on controllable doping of PtSe2, a logic inverter and vertically stacked p–n junction arrays are demonstrated. These results validate that PtSe2 is a promising candidate among the family of TMDs for future functional electronic applications.
